SEMICONDUCTOR MATERIALS AND DEVICES:-
- Unit - I :Crystal Properties and charge Carriers in Semiconductors
Elemental and compound semiconductor materials, crystal lattice structure.
Bonding forces and energy bands in solids, charge carriers in semiconductors, carrier concentrations, drift of carriers in electric and magnetic fields.
- Unit - II : : Excess Cariers in Semiconductors
Optical absorption, luminescence, carrier life time and photo conductivity, diffusion of carriers.
- Unit - III : Junction Properties
Equilibrium conditions, biased junctions, steady state conditions, break down mechanism (rectifying diodes, Zener diodes).
Transient conditions, metal semiconductor junctions, hetero junctions, (Varactor Diode, switching diodes and Schottky diodes.)
- Unit - IV : Transitors and Optoelectronic Devices
Bipolar junction transistors: Fundamentals of BJT operation, amplification with BJTs, metal semiconductor field effect transistors (MESFET), metal insulator semiconductor field effect transistors (MISFET), Construction, Operation and characteristics of above devices.
Photodiodes, photo detectors, solar cell, light emitting diodes, light emitting materials, optical fibre, semiconductor lasers, material for semiconductor lasers.
- Unit - V : Negative Conductance Microwave Devices and Power Devices
Tunnel diodes, degenerate semiconductors, transit time device: the IMPATT diode, the transferred electron mechanism : The GUNN diode.
Four layer devices : P-N-P-N diode, semiconductor controlled rectifier (SCR), bilateral devices : DIAC, TRIAC, IGBT.