VLSI Technology and Design :-
- Unit - I :
1.Era of Integrated Circuit: Introduction to Monolithic Integrated Circuit Technology, Bipolar & MOS IC, Film IC 2. Crystal Growth: Silicon wafer Preparation & characterization, Oxidation: Thermal oxidation, Oxide thickness measurement, Oxidation system.
- Unit - II :
Diffusion of dopants: Diffusion Eqns. Dopant profiles, sheet resistance, diffusion furnace, liquid and gaseous dopants, Ion Implantation: Ion implantation techniques, dopant profiles, apparatus used, Exitaxy: Eepitaxial growth of Si, apparatus for epitaxy, Photolithography techniques for pattern transfer, Mask making, photo resist & Etching techniques. Film Deposition: Vacuum deposition & Sputtering apparatus, CVD Processes and its applications in IC Lab, Metallization
- Unit - III :
1.MOS Transistor: MOS Structure, MOS/IGFET Devices, MOS System under external bias, Structure & operation of MOSFET, Enhancement mode & Depletion mode devices, I-V Characteristics, MOSFET Scaling & Small-Geometry Effects. 2.CMOS Basic Circuits: MOS Inverters, static & dynamic characteristics, NAND, NOR, AOI Circuits, Design Considerations, Layout Design, Micron & Submicron technologies, parasitic effects, Physical limitations, Concepts of SPICE for Circuit simulation.
- Unit - IV :
Standard Digital ICs: Combinational and Sequential MOS Logic Circuits, Design of standard Cells for LSI, VLSI Circuits, Computer-Aided Design Technology, Semiconductor Memories: DRAM, SRAM, Flash
- Unit - V :
Programmable Logic Devices: PLA, PAL, PLD/CPLD, PGA/FPGA, ASIC, VLSI Testing.