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SYLLABI FOR ELECTRONICS & COMMUNICATION
ECE DEPTT.
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VLSI Technology and Design :-
  • Unit - I :

    1.Era of Integrated Circuit: Introduction to Monolithic Integrated Circuit Technology, Bipolar & MOS IC, Film IC 2. Crystal Growth: Silicon wafer Preparation & characterization, Oxidation: Thermal oxidation, Oxide thickness measurement, Oxidation system.
  • Unit - II :

    Diffusion of dopants: Diffusion Eqns. Dopant profiles, sheet resistance, diffusion furnace, liquid and gaseous dopants, Ion Implantation: Ion implantation techniques, dopant profiles, apparatus used, Exitaxy: Eepitaxial growth of Si, apparatus for epitaxy, Photolithography techniques for pattern transfer, Mask making, photo resist & Etching techniques. Film Deposition: Vacuum deposition & Sputtering apparatus, CVD Processes and its applications in IC Lab, Metallization
  • Unit - III :

    1.MOS Transistor: MOS Structure, MOS/IGFET Devices, MOS System under external bias, Structure & operation of MOSFET, Enhancement mode & Depletion mode devices, I-V Characteristics, MOSFET Scaling & Small-Geometry Effects. 2.CMOS Basic Circuits: MOS Inverters, static & dynamic characteristics, NAND, NOR, AOI Circuits, Design Considerations, Layout Design, Micron & Submicron technologies, parasitic effects, Physical limitations, Concepts of SPICE for Circuit simulation.

  • Unit - IV :

    Standard Digital ICs: Combinational and Sequential MOS Logic Circuits, Design of standard Cells for LSI, VLSI Circuits, Computer-Aided Design Technology, Semiconductor Memories: DRAM, SRAM, Flash

  • Unit - V :

    Programmable Logic Devices: PLA, PAL, PLD/CPLD, PGA/FPGA, ASIC, VLSI Testing.